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NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch
Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V D Wide Surge Area: ICSM = 55A @ 350V Applications: D Switchmode Power Supply D DC/DC and DC/AC Converters D Motor Control Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Collector-Emitter Voltage (VBE = -2.5V), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current (tp 5ms), IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current (tp 5ms), IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Power Dissipation, Ptot TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W TC = +60C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +175C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1C/W Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Sustaining Voltage VCEO(sus) IB = 0, IC = 200mA, L = 25mH Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)EBO IC = 0, IE = 50mA ICEX ICER TJ = +25C TJ = +125C TJ = +25C TJ = +125C VCE = VCEX, VBE = -2.5V VCE = VCEX, RBE = 10 450 7 - - - - - - - - - - - 30 0.2 2.0 0.5 4.0 V V mA mA mA mA Symbol Test Conditions Min Typ Max Unit
Electrical Characteristics (Cont'd): (TJ = +25C unless otherwise specified)
Parameter OFF Characteristics (Cont,d) Emitter Cutoff Current ON Characteristics (Note 1) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn-On Time Storage Time Fall Time Storage Time Fall Time hFE VCE(sat) VBE(sat) ton ts tf ts tf TJ = +25C VCC = 300V, VBB = -5V, TJ = +125C LB = 3H, TJ = +25C IC = 8A, TJ = +125C IBend = 1.6A IC = 8Adc, VCE = 5Vdc) IC = 8A, IB = 1.6A IC = 12A, IB = 2.4A IC = 8A, IB = 1.6A VCC = 150V, IC = 8A, IB1 = -IB2 = 1.6A Switching Characteristics (Switching Times on Resistive Load) - - - - - - - 0.55 1.5 0.3 3.5 - 0.08 - 1.0 3.0 0.8 - 5.0 - 0.4 s s s s s s s 10 - - - - - - - - 1.5 5.0 1.6 - V V V IEBO IC = 0, VBE = -5V - - 1 mA Symbol Test Conditions Min Typ Max Unit
Switching Characteristics (Switching Times on Inductive Load)
Note 1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2%
.600 (15.24)
.060 (1.52) .173 (4.4)
C
.156 (3.96) Dia. B C E
.550 (13.97)
.430 (10.92)
.500 (12.7) Min .055 (1.4) .015 (0.39)
.216 (5.45)
NOTE: Dotted line indicates that case may have square corners

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